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| BUF620 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 9 4 6 2 3 40 150 -65 to +150 Unit V V V V A A A A W C C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase 25C Maximum Thermal Resistance Tcase = 25C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 3.12 Unit K/W Document Number 86507 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 1 (9) BUF620 Vishay Telefunken Electrical Characteristics Tcase = 25C, unless otherwise specified Parameter Collector cut-off current Test Conditions VCE = 700 V VCE = 700 V; Tcase = 150C Collector-emitter breakdown IC = 300 mA; L = 125 mH; voltage (figure 1) Imeasure = 100 mA Emitter-base breakdown voltage IE = 1 mA Collector-emitter saturation voltage IC = 0.6 A; IB = 0.15 A g IC = 2 A; IB = 0.7 A Base-emitter saturation voltage g IC = 0.6 A; IB = 0.15 A IC = 2 A; IB = 0.7 A DC forward current transfer ratio VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 0.6 A VCE = 2 V; IC = 2 A VCE = 5 V; IC = 4 A Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 4 A; IB1 = 1.4 A; -IB2 = 0.4 A; -VBB = 5 V Dynamic saturation voltage y g IC = 2 A; IB = 0.4 A; t = 1 ms IC = 2 A; IB = 0.4 A; t = 3 ms Gain bandwidth product IC = 500 mA; VCE = 10 V; f = 1 MHz Symbol ICES ICES V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat hFE hFE hFE hFE VCEW VCEsatdyn VCEsatdyn fT Min Typ Max 50 0.5 Unit mA mA V V V V V V 400 9 0.1 0.2 0.9 1 15 15 7 4 500 0.2 0.3 1.1 1.2 V 10 2 8 15 4 V V MHz www.vishay.de * FaxBack +1-408-970-5600 2 (9) Document Number 86507 Rev. 2, 20-Jan-99 BUF620 Vishay Telefunken Switching Characteristics Tcase = 25C, unless otherwise specified Parameter Test Conditions Resistive load (figure 2) Turn on time IC = 0.6 A; IB1 = 0.15 A; -IB2 = 0.3 A; VS = 250 V Storage time Fall time Turn on time IC = 2 A; IB1 = 0.4 A; -IB2 = 1 A; VS = 250 V Storage time Fall time Inductive load (figure 3) Storage time IC = 0.6 A; IB1 = 0.15 A; -IB2 = 0.3 A; Vclamp = 300 V; L = 200 mH Fall time Storage time IC = 2 A; IB1 = 0.4 A; -IB2 = 1 A; Vclamp = 300 V; L = 200 mH Fall time Symbol ton ts tf ton ts tf ts tf ts tf Min Typ 0.15 2.1 0.2 0.4 1 0.1 2.2 0.2 1 0.1 Max 0.25 3 0.4 0.6 1.2 0.15 3 0.3 1.3 0.15 Unit ms ms ms ms ms ms ms ms ms ms 94 8863 V S2 + 10 V IB IC w Imeasure IC 5 IC V S1 + 0 to 30 V V(BR)CEO tp T tp 3 Pulses + LC VCE V(BR)CEO 100 mW + 0.1 + 10 ms I(BR)R Figure 1. Test circuit for V(BR)CE0 Document Number 86507 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (9) BUF620 Vishay Telefunken 94 8852 IB IB1 0 t RC -IB2 IC (1) IB1 RB VBB + VCE IB VCC IC 0.9 IC 0.1 IC tr td ton t ts toff tf (1) Fast electronic switch Figure 2. Test circuit for switching characteristics - resistive load 94 8853 IB IB1 LC 0 -IB2 IC (1) IB1 RB VBB IB VCE Vclamp (2) IC VCC 0.9 IC t + (1) Fast electronic switch (2) Fast recovery rectifier 0.1 IC t ts tr Figure 3. Test circuit for switching characteristics - inductive load www.vishay.de * FaxBack +1-408-970-5600 4 (9) Document Number 86507 Rev. 2, 20-Jan-99 BUF620 Vishay Telefunken Typical Characteristics (Tcase = 25_C unless otherwise specified) 6 P tot - Total Power Dissipation ( W ) IC - Collector Current ( A ) 5 4 3 2 1 0 0 95 10492 100 12.5 K/W 3.12 K/W 10 1 25 K/W 0.1 0.01 0.001 50 K/W RthJA = 135 K/W 0.1 x IC < IB2 < 0.5 x IC VCEsat < 2V 100 200 300 400 500 600 95 10519 0 25 50 75 100 125 150 VCE - Collector Emitter Voltage ( V ) Tcase - Case Temperature ( C ) Figure 4. VCEW - Diagram - Collector Emitter Saturation Voltage (V) 10 Tj = 25C I - Collector Current (V) 8 10 Figure 7. Ptot vs.Tcase 1 0.6A 0.1 1.2A 2A IC=3A 6 4 600mA 800mA IB = 1A 400mA 2 0 0 2 4 6 200mA 100mA 50mA 8 10 C CEsat 0.01 0.01 0.1 1 10 94 9112 VCE - Collector Emitter Voltage (V) V 94 9115 IB - Base Current (A) Figure 5. IC vs. VCE 100 - Forward DC Current Transfer Ratio - Forward DC Current Transfer Ratio 100 Figure 8. VCEsat vs. IB Tj = 125C Tj = 25C 10 Tj = -25C VCE = 10V 10 VCE = 5V VCE = 2V Tj = 25C 1 0.01 0.1 1 10 94 9114 VCE = 2V 1 0.01 0.1 FE h h FE 1 10 94 9113 IC - Collector Current (A) IC - Collector Current (A) Figure 6. hFE vs. IC Figure 9. hFE vs. IC Document Number 86507 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 5 (9) BUF620 Vishay Telefunken 8 saturated switching R-load IC = 0.6A, IB1 = 0.08A t f - Fall Time ( ms ) 1.0 saturated switching R-load IC = 0.6A, IB1 = 0.08A t s - Storage Time ( ms ) 6 0.8 4 Tj = 125C 0.6 Tj = 125C 0.4 0.2 Tj = 25C 0 2 Tj = 25C 0 0 2 4 -IB2/IB1 6 8 95 10497 0 2 4 -IB2/IB1 6 8 95 10496 Figure 10. ts vs. -IB2/IB1 10 saturated switching R-load IC = 0.6A, IB1 = 0.15A t f - Fall Time ( m s) 1.0 Figure 13. tf vs. -IB2/IB1 8 ts - Storage Time ( m s) 0.8 0.6 saturated switching R-load IC = 0.6A, IB1 = 0.15A 6 Tj = 125C 4 0.4 Tj = 125C 0.2 2 Tj = 25C 0 0 94 9120 Tj = 25C 0 3 4 94 9121 1 2 -IB2 / IB1 0 1 2 -IB2 / IB1 3 4 Figure 11. ts vs. -IB2/IB1 5 0.5 Figure 14. tf vs. -IB2/IB1 4 t s - Storage Time ( m s) t f - Fall Time ( m s) 3 Tj = 25C saturated switching L-load IC = 0.6A, IB1 = 0.15A 0 94 9122 0.4 0.3 saturated switching L-load IC = 0.6A, IB1 = 0.15A 2 Tj = 125C Tj = 125C 0.2 Tj = 25C 0.1 0 1 0 1 2 -IB2 / IB1 3 4 94 9123 0 1 2 -IB2 / IB1 3 4 Figure 12. ts vs. -IB2/IB1 Figure 15. tf vs. -IB2/IB1 www.vishay.de * FaxBack +1-408-970-5600 6 (9) Document Number 86507 Rev. 2, 20-Jan-99 BUF620 Vishay Telefunken 10 saturated switching R-load IC = 1A, IB1 = 0.2A t f - Fall Time ( m s) Tj = 125C 6 1.0 saturated switching R-load IC = 1A, IB1 = 0.2A 8 ts - Storage Time ( m s) 0.8 0.6 Tj = 125C 0.4 Tj = 25C 0.2 0 4 Tj = 25C 2 0 0 1 2 -IB2 / IB1 3 4 0 94 9125 1 2 -IB2 / IB1 3 4 94 9124 Figure 16. ts vs. -IB2/IB1 10 unsaturated (Baker clamp) R-load IC = 1A, IB1 = 0.2A t f - Fall Time ( m s) 1.0 Figure 18. tf vs. -IB2/IB1 8 ts - Storage Time ( m s) 0.8 0.6 unsaturated (Baker clamp) R-load IC = 1A, IB1 = 0.2A 6 Tj = 125C 0.4 4 Tj = 125C 2 0 Tj = 25C 0 1 2 -IB2 / IB1 3 4 0.2 Tj = 25C 0 0 94 9127 1 2 -IB2 / IB1 3 4 94 9126 Figure 17. ts vs. -IB2/IB1 Figure 19. tf vs. -IB2/IB1 Document Number 86507 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 7 (9) BUF620 Vishay Telefunken Dimensions in mm 0.52 0.40 4.8 4.4 2.70 2.35 1.40 1.27 1.3 1.0 0.85 0.65 1.5 0.9 E 10.4 9.8 3.8 3.5 C 2.64 2.44 B 1.5 1.2 2.9 2.7 6.7 5.8 4.8 4.3 13.6 12.2 16.0 15.2 Standard Plastic Case 14A 3 DIN 41 869 JEDEC TO 220 94 9184 technical drawings according to DIN specifications Collector connected with metallic surface www.vishay.de * FaxBack +1-408-970-5600 8 (9) Document Number 86507 Rev. 2, 20-Jan-99 BUF620 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 86507 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 9 (9) |
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